S-81.312 Tehoelektroniikan komponentit J. Niiranen 1 (9) Tentti 2.1.214, kello 16... 19, sali S4 Papereihin Tentissä sallitut apuvälineet - sukunimi ja etunimet - kynät, kumit jne. - opiskelijanumero - taskulaskin - koulutusohjelma. - lukion kaavakokoelma tms. + Laplace taulut 1. Selvitä lyhyesti (max. 2...4 lausetta + mahdollinen kuva), mitä seuraavilla termeillä tarkoitetaan - diffuusiomenetelmä - takavirta - IGCT - heat-pipe - kaksoiskerroskondensaattori. 2. Esittele IGBT:n rakenne, toimintaperiaate ja ominaisuudet. 3. Esittele kirjassa esitetyt puolijohdetehokomponenttien jäähdytysmenetelmät ja -laitteet sekä niiden keskinäiset edut ja haitat. 4. Määrää CMF212D SiC-MOSFET:in vaatiman jäähdytyselementin lämpövastus, kun fetin virta on oheisen kuvan mukainen. Hilan jännite on johtotilassa + 22 V ja johtamattomassa tilassa 2 V. Hilaohjaimen sisäinen resistanssi on 6,8 Ω. Fetin yli oleva jännite on päällekytkennän aikana 6 V ja katkaisun aikana 8 V. Jäähdytysilman lämpötila on 45 C. I D 25A 2µs t 4µs 5. Erään jännitettä laskevan tasasähkökatkojan lähtövirtapulssit on tarkoitus muodostaa ferriittirenkaasta TN26/15/1-3C9 tehdyn kuristimen avulla. Kuristimen yli on 19 V jännite 1 µs ajan, jona aikana kuristimen virran halutaan kasvavan nollasta noin,5 A maksimiarvoon. a) Kuinka monta johdinkierrosta pitää olla tarvittavan induktanssin aikaansaamiseksi? b) Mikä on renkaan vuontiheys B maksimivirralla kyseisellä kierrosmäärällä? c) Onko kyseinen ferriittirengas sopiva tähän sovellukseen? Perustele päätelmäsi. Kaavoja seuraavalla sivulla, datalehti viimeisellä sivulla. Huom! ferriittirenkaassa ei ole ilmaväliä!
CMF212D-Silicon Carbide Power MOSFET Z-FeT TM MOSFET N-Channel Enhancement Mode Features Package V DS R DS(on) = 12 V = 8 mω I D(MAX) @T C =25 C = 33 A Industry Leading R DS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Pb-Free Plating, RoHS Compliant, Halogen Free Benefits TO-247-3 G D SS Higher System Efficiency Reduced Cooling Requirements Avalanche Ruggedness Increased System Switching Frequency Applications Solar Inverters High Voltage DC/DC Converters Motor Drives Part Number CMF212D Package TO-247-3 Maximum Ratings Symbol Parameter Value Unit Test Conditions Note I D Continuous Drain Current 33 V GS @2V, T C = 25 C A 17 V GS @2V, T C = 1 C I Dpulse Pulsed Drain Current 78 A E AS Single Pulse Avalanche Energy 2.2 J Pulse width t P limited by T jmax T C = 25 C I D = 2A, V DD = 5 V, L = 9.5 mh E AR Repetitive Avalanche Energy 1.5 J t AR limited by T jmax I AR Repetitive Avalanche Current 2 A I D = 2A, V DD = 5 V, L = 3 mh t AR limited by Tjmax V GS Gate Source Voltage -5/+25 V P tot Power Dissipation 15 W T C =25 C T J, T stg Operating Junction and Storage Temperature -55 to +125 C T L Solder Temperature 26 C 1.6mm (.63 ) from case for 1s M d Mounting Torque 1 8.8 Nm lbf-in M3 or 6-32 screw 2 CMF212D Rev. A
Electrical Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain-Source Breakdown Voltage 12 V V GS = V, I D = 1μA V GS(th) I DSS Gate Threshold Voltage Zero Gate Voltage Drain Current 2.5 4 V DS = V GS, I D = 1mA, T J = 25ºC V 1.8 V DS = V GS, I D = 1mA, T J = 125ºC 1 1 V DS = 12V, V GS = V, T J = 25ºC μa 1 25 V DS = 12V, V GS = V, T J = 125ºC I GSS Gate-Source Leakage Current 25 na V GS = 2V, V DS = V R DS(on) g fs Drain-Source On-State Resistance Transconductance C iss Input Capacitance 1915 C oss Output Capacitance 12 C rss Reverse Transfer Capacitance 13 t d(on)i Turn-On Delay Time 17.2 t r Rise Time 13.6 t d(off)i Turn-Off Delay Time 62 t fi Fall Time 35.6 E ON Turn-On Switching Loss (25ºC) (125ºC) E Off Turn-Off Switching Loss (25ºC) (125ºC) 8 11 VGS = 2V, ID = 2A, TJ = 25ºC mω 95 13 V GS = 2V, I D = 2A, T J = 125ºC 7.3 V DS= 2V, I DS= 2A, T J = 25ºC S 6.8 V DS= 2V, I DS= 2A, T J = 125ºC pf ns V GS = V V DS = 8V f = 1MHz VAC = 25mV V DD = 8V V GS = -2/2V I D = 2A R G = 6.8Ω L = 856μH Per JEDEC24 Page 27 R G Internal Gate Resistance 5 Ω V GS = V, f = 1MHz, V AC = 25mV NOTES: 1. The recommended on-state V GS is +2V and the recommended off-state V GS is between -2V and -5V Reverse Diode Characteristics 53 422 32 329 Symbol Parameter Typ. Max. Unit Test Conditions Note μj μj 1 fig. 3 fig. 5 fig. 12 V sd Diode Forward Voltage t rr Reverse Recovery Time 22 ns Q rr Reverse Recovery Charge 142 nc I rrm Peak Reverse Recovery Current 2.3 A 3.5 V GS = -5V, I F =1A, T J = 25ºC 3.1 V V GS = -2V, I F =1A, T J = 25ºC V GS = -5V, I F =2A, T J = 25ºC V R = 8V, di F/dt= 1A/μs fig. 13,14 Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note R θjc Thermal Resistance from Junction to Case.58.7 R θcs Case to Sink, w/ Thermal Compound.25 R θja Thermal Resistance From Junction to Ambient 4 C/W fig. 6 Gate Charge Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note Q gs Gate to Source Charge 23.8 Q gd Gate to Drain Charge 43.1 Q g Gate Charge Total 9.8 nc V DD = 8V I D =2A V GS = -2/2V Per JEDEC24-2 fig.9 8 CMF212D Rev. A
Typical Performance 12 12 I D (A) 1 8 6 V GS=2V V GS=18V V GS=16V I D (A) 1 8 6 V GS=2V V GS=18V V GS=16V V GS=14V 4 V GS=14V 4 V GS=12V 2 V GS=12V V GS=1V 2 V GS=1V 2 4 6 8 1 12 14 16 18 2 V DS (V) Fig 1. Typical Output Characteristics T J = 25ºC 2 4 6 8 1 12 14 16 18 2 V DS (V) Fig 2. Typical Output Characteristics T J = 125ºC 6 5 2 1.8 1.6 4 1.4 I D (A) 3 2 T = 125 C T = 25 C Normalized R DS(on) 1.2 1.8.6 V GS=2V 1.4.2 2 4 6 8 1 12 14 16 18 2 V GS (V) Figure 3. Typical Transfer Characteristics 25 5 75 1 125 15 T ( o C) Fig 4. Normalized On-Resistance vs. Temperature 1.E-8 V GS = V f = 1 MHz 1.E-8 V GS = V f = 1 MHz C iss C iss 1.E-9 1.E-9 Capacitance (F) 1.E-1 C oss Capacitance (F) 1.E-1 C oss C rss C rss 1.E-11 2 4 6 8 1 12 14 16 18 2 V DS (V) 1.E-11 1 2 3 4 5 6 7 8 V DS (V) Fig 5A and 5B. Typical Capacitance vs. Drain Source Voltage 9 CMF212D Rev. A
Typical Performance 1.E+ 1.E-1 Z th ( o C/W) 1.E-2 1.E-3 1.E-4 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 Time (s) Fig 6. Transient Thermal Impedence, Junction - Case 6 6 5 5 Switching Loss (µj) 4 3 2 1 V GS= -2/2V RG= 11.8Ω Total VDD= 8V ID= 2A Switching Loss (µj) 4 3 2 1 V GS= -2/2V RG= 11.8Ω Total VDD= 8V ID= 2A 25 5 75 1 125 15 Temp ( C) Fig 7. Inductive Switching Energy(Turn-on) vs. T 25 5 75 1 125 15 Temp ( C) Fig 8. Inductive Switching Energy(Turn-off) vs. T 25 25 25 2 2 V DS 2 V GS (V) 15 1 I D =2A V DD =8V I DS (A) 15 1 I DS 15 V DS (V) 1 5 E AS = 2.2 J 5 5-5 2 4 6 8 1 Gate Charge (nc) Fig 9. Typical Gate Charge Characteristics @ 25 C.1.2.3.4.5.6 Time (s) Fig 1. Typical Avalanche Waveform 1 CMF212D Rev. A
Clamped Inductive Switch Testing Fixture tw VGS(on) pulse duration Input (V i ) 5% 9% 9% 5% 1% 1% 856μH C2D112D 1A, 12V SiC Schottky VGS(off) Input Pulse Rise Time Input Pulse Fall Time + 8V - 42.3μf td(on)i tfi td(off)i tri CMF212D D.U.T. id(on) 1% 1% Output (i D ) 9% 9% id(off) ton(i) toff(i) Fig 11. Switching Waveform Test Circuit Fig 12. Switching Test Waveform Times Ic t rr Qrr= trr id dt tx Vpk tx 1% Vcc Irr 1% Irr Vcc Diode Recovery Waveforms + - 8V 42.3μf 856μH CMF212D CMF212D D.U.T. Diode Reverse Recovery Energy Erec= t2 id dt t1 t1 t2 Fig 13. Body Diode Recovery Waveform Fig 14. Body Diode Recovery Test 11 CMF212D Rev. A
E A = 1/2L x I D 2 Fig 15. Avalanche Test Circuit Fig 16. Theoretical Avalanche Waveform Package Dimensions Package TO-247-3 G D SSS Inches Millimeters POS Min Max Min Max A.19.25 4.83 5.21 A1.9.1 2.29 2.54 A2.75.85 1.91 2.16 b.42.52 1.7 1.33 b1.75.95 1.91 2.41 b2.75.85 1.91 2.16 b3.113.133 2.87 3.38 b4.113.123 2.87 3.13 c.22.27.55.68 D.819.831 2.8 21.1 D1.64.695 16.25 17.65 D2.37.49.95 1.25 E.62.635 15.75 16.13 E1.516.557 13.1 14.15 E2.145.21 3.68 5.1 E3.39.75 1. 1.9 E4.487.529 12.38 13.43 e.214 BSC 5.44 BSC N 3 3 L.78.8 19.81 2.32 L1.161.173 4.1 4.4 ØP.138.144 3.51 3.65 Q.216.236 5.49 6. S.238.248 6.4 6.3 12 CMF212D Rev. A
214-1-2 3
214-1-2 3