S-81.312 Tehoelektroniikan komponentit J. Niiranen 1 (14) Tentti 11.12.214, kello 16... 19, sali E11 Papereihin Tentissä sallitut apuvälineet - sukunimi ja etunimet - kynät, kumit jne. - opiskelijanumero - taskulaskin - koulutusohjelma. - lukion kaavakokoelma tms. + Laplace taulut 1. Selvitä lyhyesti (max. 2...4 lausetta + mahdollinen kuva), mitä seuraavilla termeillä tarkoitetaan - neutronisäteilytys - takavirta - triak - ESR - ferriitti. 2. Esittele IGBT:n rakenne, toimintaperiaate ja ominaisuudet. 3. Selvitä, mitä vaikeuksia on puolijohdetehokomponenttien rinnankytkennässä ja mitä menetelmiä on käytettävissä niiden voittamiseen. Miten diodien sekä MOSFET- ja IGBTkomponenttien ominaisuudet vaikuttavat niiden toimintaan rinnankytkennässä? 4. Tyristorin SKKT 71 hilapulssi vahvistetaan kuvan mukaisella piirillä. MOSFET-transistorin sisäinen vastus R DS on 1Ω. Onko tyristorin syttyminen varmaa 4 C lämpötilassa? Mikä on suurin mahdollinen tyristorin hilahäviöteho, jonka kytkentä voi saada aikaan? 1 Ω 5. Aurinkopaneelin DC/DC katkojan SiC MOSFET moduuli CAS3M17BM2 (datalehti oheisena) sisältää kaksi MOSFET transistoria diodeineen. Yläpuolen fet (3. kvadrantissa, eli myös kanava johtaa, ei pelkkä siis diodi) ja alapuolen fet johtavat alla olevan kuvan mukaisesti vuorotellen paneelista tulevaa virtaa. Jäähdytyselementin ja rajapinnan yhteislämpövastus R thca on,8 C/W ja jäähdytysilman lämpötila on 45 C. Mitkä ovat fettien liitoslämpötilat, kun fettien hilasyötön resistanssi on 2.5 Ω ja jännite + 2 V fettien johtoaikana ja 5 V muulloin? Tasasähkökondensaattorin jännite on 1 V.
S-81.312 Components of power electronics J. Niiranen 1 (14) Examination Dec 11, 214, at 16:... 19:, room E11 Write in all papers Items allowed in the exam: - your full name - pens, eraser, etc - your student number - calculator - department. - Book of math. formulas & Laplace tables 1. Give a short definition (max. 2...4 sentences + possible figure), what the following terms mean - neutron transmutation doping - reverse recovery - triac - ESR - ferrite. 2. Describe in detail the structure, operation principle and properties of an IGBT. 3. Describe the difficulties of parallel operation of power devices and what means there are to overcome these. How the properties of diodes, MOSFETs and IGBTs affect their parallel operation? 4. Gate current pulse of the thyristor SKKT 71 is produced by the circuit shown below. The internal resistance of the driving MOSFET is R DS = 1Ω. Is the firing of the thyristor certain at 4 C temperature? What is the worst case (that is, maximum) power loss caused by the driver in the thyristor? 1 Ω 5. The SiC MOSFET module CAS3M17BM2 (datasheet attached) of a photovoltaic converter's DC/DC chopper contains two MOSFET transistors with their diodes. The upper fet (operating in 3rd quadrant, that is, the fet's channel conducts too, not only the diode) and the lower fet conducts the solar panel current in turns according the figure below. The combined thermal resistance of the heatsink and the interface of the module R thca is,8 C/W and the temperature of cooling air is 45 C. The gate driver's resistance is 2.5 Ω and voltage is + 2 V when fets conduct and 5 V when they are off. The voltage of the intermediate circuit's capacitor is 1 V. Calculate the junction temperatures of the fets.
VRSM VRRM (dv/ ITRMS (maximum value for continuous operation) V DRM dt) cr 125 A I TAV (sin. 18; T case = 78 C) V V V/µs 8 A 7 6 5 SKKT 71/6 D SKKH 72/6 D 9 8 5 SKKT 71/8 D SKKT 72/8 D 1) SKKH 71/8 D SKKH 72/8 D 13 12 5 SKKT 71/12 D SKKH 71/12 D 13 12 1 SKKT 71/12 E SKKT 72/12 E 1) SKKH 72/12 E 15 14 1 SKKT 71/14 E SKKT 72/14 E 1) SKKH 71/14 E SKKH 72/14 E 17 16 1 SKKT 71/16 E SKKT 72/16 E 1) SKKH 71/16 E SKKH 72/16 E 19 18 1 SKKT 71/18 E SKKT 72/18 E 1) SKKH 71/18 E SKKH 72/18 E 21 2 1 SKKT 71/2 E SKKT 72/2 E 1) SKKH 72/2 E 23 22 1 SKKT 71/22 E SKKT 72/22 E 1) SKKH 72/22 E Symbol Conditions SKKT 71 SKKT 72 SKKH 71 SKKT 72B SKKH 72 ITAV sin. 18; Tcase = 78 C 8 A T case = 85 C 7 A ID B2/B6 Tamb = 45 C; P 3/18 62 A/75 A T amb = 35 C; P 3/18 F 115 A/145 A IRMS W1/W3 Tamb = 35 C; P 3/18 F 155 A/3 x 115 A I TSM T vj = 25 C; 1 ms 1 6 A Tvj = 125 C; 1 ms 1 45 A i 2 t T vj = 25 C; 8,3... 1 ms 13 A 2 s Tvj = 125 C; 8,3... 1 ms 1 5 A 2 s tgd Tvj = 25 C; IG = 1 A; dig/dt = 1 A/µs 1 µs t gr V D =,67. V DRM 2 µs (di/dt)cr Tvj = 125 C 15 A/µs t q T vj = 125 C typ. 8 µs IH Tvj = 25 C; typ.15 ma; max. 25 ma I L T vj = 25 C; R G = 33 Ω typ.3 ma; max. 6 ma V T T vj = 25 C; I T = 3 A max. 1,9 V VT(TO) Tvj = 125 C,9 V r T T vj = 125 C 3,5 mω IDD; IRD Tvj = 125 C; VDD = VDRM; VRD = VRRM max. 2 ma 3) V GT T vj = 25 C; d. c. 3 V I GT T vj = 25 C; d. c. 15 ma VGD Tvj = 125 C; d. c.,25 V I GD T vj = 125 C; d. c. 6 ma Rthjc cont.,35 C/W /,18 C/W sin. 18,37 C/W /,19 C/W per thyristor/per module rec.12,39 C/W /,2 C/W R thch,2 C/W /,1 C/W Tvj, Tstg 4... +125 C V isol a. c. 5 Hz; r.m.s.; 1 s/1 min 36 V / 3 V M 1 to heatsink SI units/ 5 Nm/44 lb. in. ± 15 % 2) M2 to terminals US units 3 Nm/26 lb. in. ± 15 % a 5. 9,81 m/s 2 w approx. 12 g Case page B 1 93 SKKT 71: A 5 SKKT 72: A 46 SKKH 71: A 6 SKKT 72B: A 48 SKKH 72: A 47 SEMIPACK 1 Thyristor/ Diode Modules SKKT 71 SKKH 71 SKKT 72 SKKH 72 SKKT 72B SKKT 71 SKKH 71 SKKT 72 SKKH 72 Features Heat transfer through aluminium oxide ceramic isolated metal baseplate Hard soldered joints for high reliability UL recognized, file no. E 63 532 Typical Applications DC motor control (e. g. for machine tools) AC motor soft starters Temperature control (e. g. for ovens, chemical processes) Professional light dimming (studios, theaters) 1) Also available in SKKT 72 B configuration (case A 48) 2) See the assembly instructions 3) /2 E, /22 E max. 3 ma by SEMIKRON 896 B 1 51
B 1 52 by SEMIKRON
by SEMIKRON B 1 53
B 1 54 by SEMIKRON
Datasheet: CAS3M17BM2,Rev. - CAS3M17BM2 1.7kV, 8. mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode V DS E sw, Total @ 3A, 15 C R DS(on) 1.7 kv 23.7 mj 8. mω Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator System Benefits Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Package 62mm x 16mm x 3mm Applications HF Resonant Converters/Inverters Solar and Wind Inverters UPS and SMPS Motor Drive Traction Part Number Package Marking CAS3M17BM2 Half-Bridge Module CAS3M17BM2 Maximum Ratings (T C = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes V DSmax Drain - Source Voltage 1.7 kv V GSmax Gate - Source Voltage -1/+25 V Absolute maximum values V GSop Gate - Source Voltage -5/2 V Recommended operational values I D Continuous MOSFET Drain Current 325 V GS = 2 V, T C = 25 C A 225 V GS = 2 V, T C = 9 C Fig. 26 I D(pulse) Pulsed Drain Current 9 A Pulse width tp limited by T J(max) I F Continuous Diode Forward Current 556 V GS = -5 V, T C = 25 C A 353 V GS = -5 V, T C = 9 C Fig. 27 T Jmax Junction Temperature -4 to +15 C T C,T STG Case and Storage Temperature Range -4 to +125 C V isol Case Isolation Voltage 4.5 kv AC, 5 Hz, 1 min L Stray Stray Inductance 15 nh Measured between terminals 2 and 3 P D Power Dissipation 176 W T C = 25 C, T J = 15 C Fig. 25 Subject to change without notice. www.cree.com 1
Electrical Characteristics (T C = 25 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain - Source Breakdown Voltage 1.7 kv V GS, = V, I D = 1 ma V GS(th) Gate Threshold Voltage 1.8 2.3 V V DS = 1 V, ID = 15 ma Fig. 7 I DSS Zero Gate Voltage Drain Current 5 1 μa V DS = 1.7 kv, V GS = V 15 3 μa V DS = 1.7 kv,v GS = V, T J = 15 C I GSS Gate-Source Leakage Current 1 6 na V GS = 2 V, V DS = V R DS(on) g fs On State Resistance Transconductance C iss Input Capacitance 2 C oss Output Capacitance 2.5 C rss Reverse Transfer Capacitance.8 E on Turn-On Switching Energy 13. mj E Off Turn-Off Switching Energy 1. mj 8. 1 mω VGS = 2 V, IDS = 225 A Fig. 4, 16.2 2 V GS = 2V, I DS = 225 A,T J = 15 C 5, 6 95 V DS = 2 V, IDS = 225 A 82 S V DS = 2 V, ID = 225 A, T J = 15 C nf V DS = 1 kv, f = 2 khz, V AC = 25 mv V DD = 9 V, V GS = -5V/+2V I D = 3 A, R G(ext) = 2.5 Ω Load = 77 μh, T J = 15 C Note: IEC 6747-8-4 Definitions R G (int) Internal Gate Resistance 3.7 Ω f = 1 MHz, V AC = 25 mv Q GS Gate-Source Charge 273 Q GD Gate-Drain Charge 324 Q G Total Gate Charge 176 nc V DD= 9 V, V GS = -5V/+2V, I D= 3 A, Per JEDEC24 pg 27 t d(on) Turn-on delay time 15 ns V DD = 9V, V GS = -5/+2V, I D = 3 A, R G(ext) = 2.5 Ω, t r Rise Time 72 ns Timing relative to V DS t d(off) Turn-off delay time 211 ns Note: IEC 6747-8-4, pg 83 t f Fall Time 56 ns Inductive load V SD Diode Forward Voltage Q C Total Capacitive Charge 4.4 μc Thermal Characteristics Fig. 8 Fig. 16, 17 Fig. 19 Fig. 15 Fig. 24 1.7 2. I F = 3 A, V GS = Fig. 1 V 2.2 2.5 I F = 3 A, V GS =, T J = 15 C Fig. 11 I SD = 3 A, V DS = 9 V, T J = 25 C, di SD /dt = 9 ka/μs, V GS = -5 V Symbol Parameter Min. Typ. Max. Unit Test Conditions Note R thjcm Thermal Resistance Juction-to-Case for MOSFET.67.71 Fig. 27 C/W R thjcd Thermal Resistance Juction-to-Case for Diode.6.65 Fig. 28 Additional Module Data Symbol Parameter Max. Unit Test Condtion W Weight 3 g M Mounting Torque 5 Nm To heatsink and terminals Clearance Distance 9 mm Terminal to terminal Creepage Distance 3 mm Terminal to terminal 4 mm Terminal to baseplate 2 CAS3M17BM2,Rev. -
Typical Performance 6 6 5 4 3 2 V GS = 2 V V GS = 18 V V GS = 16 V V GS = 14 V V GS = 12 V V GS = 1 V 5 4 3 2 V GS = 2 V V GS = 18 V V GS = 16 V V GS = 14 V V GS = 12 V V GS = 1 V 1 T J = -4 C t p = 2 µs 2 4 6 8 1 12 14 Drain-Source Voltage V DS (V) 1 T J = 25 C t p = 2 µs 2 4 6 8 1 12 14 Drain-Source Voltage V DS (V) Figure 1. Output Characteristics T J = -4 C Figure 2. Output Characteristics T J = 25 C 6 5 4 3 2 1 V GS = 14 V V GS = 16 V V GS = 18 V V GS = 2 V V GS = 12 V V GS = 1 V T J = 15 C t p = 2 µs 2 4 6 8 1 12 14 Drain-Source Voltage V DS (V) On Resistance, R DS On (p.u.) 2.5 2. 1.5 1..5 I DS = 225 A V GS = 2 V t p = 2 µs. -5-25 25 5 75 1 125 15 Junction Temperature, T J ( C) Figure 3. Output Characteristics T J = 15 C Figure 4. Normalized On-Resistance vs. Temperature On-Resistance, R DS ON (mω) 3 25 2 15 1 5 T j = 15 C T j = 25 C T j = -4 C 1 2 3 4 5 6 7 V GS = 2 V t p = 2 µs On Resistance, R DS On (mω) 18 16 14 12 1 8 6 4 2 I DS = 225 A t p = 2 µs V GS = 16 V V GS = 2 V V GS = 14 V V GS = 12 V V GS = 18 V -5-25 25 5 75 1 125 15 Junction Temperature, T J ( C) Figure 5. On-Resistance vs. Drain Current For Various Temperatures Figure 6. On-Resistance vs. Temperature for Various Gate-Source Voltage 3 CAS3M17BM2,Rev. -
Typical Performance 3.5 3. Conditions V DS = 1 V I DS =.5 15 ma 4 V DS = 2 V tp = 2 µs Threshold Voltage, V th (V) 2.5 2. 1.5 1. 3 2 1 T J = 25 C T J = 15 C T J = -4 C.5. -5-25 25 5 75 1 125 15 Junction Temperature T J ( C) Figure 7. Threshold Voltage vs. Temperature 2 4 6 8 1 12 14 16 Gate-Source Voltage, V GS (V) Figure 8. Transfer Characteristic for Various Junction Temperatures -4. -3.5-3. -2.5-2. -1.5-1. -.5. -4. -3.5-3. -2.5-2. -1.5-1. -.5. V GS = -5 V V GS = V V GS = -2 V -1-2 -3-4 V GS = -2 V V GS = V -1-2 -3-4 Drain-Source Voltage V DS (V) T J = -4 C t p = 2 µs -5-6 V GS = -5 V Drain-Source Voltage V DS (V) T J = 25 C t p = 2 µs -5-6 Figure 9. Diode Characteristic at -4 C Figure 1. Diode Characteristic at 25 C -4. -3.5-3. -2.5-2. -1.5-1. -.5. V GS = -5 V V GS = V V GS = -2 V -1-2 -3-4 -3. -2.5-2. -1.5-1. -.5. V GS = V V GS = 5 V V GS = 1 V V GS = 15 V V GS = 2 V -1-2 -3-4 Drain-Source Voltage V DS (V) T J = 15 C t p = 2 µs -5-6 Drain-Source Voltage V DS (V) T J = -4 25 C t p = 2 µs -5-6 Figure 11. Diode Characteristic at 15 C Figure 12. 3 rd Quadrant Characteristic at -4 C 4 CAS3M17BM2,Rev. -
Typical Performance -3. -2.5-2. -1.5-1. -.5. -3. -2.5-2. -1.5-1. -.5. V GS = V V GS = 5 V V GS = 1 V V GS = 2 V V GS = 15 V -1-2 -3-4 V GS = 1 V V GS = V V GS = 5 V V GS = 2 V V GS = 15 V -1-2 -3-4 T J = 25 C t p = 2 µs -5 T J = 25 15 C t p = 2 µs -5 Drain-Source Voltage V DS (V) -6 Drain-Source Voltage V DS (V) -6 Figure 13. 3 rd Quadrant Characteristic at 25 C Figure 14. 3 rd Quadrant Characteristic at 15 C Gate-Source Voltage, V GS (V) 25 2 15 1 5 I DS =3A I GS = 1 ma V DS = 9 V T J = 25 C Capacitance (nf) 1 1 1.1 C iss C oss C rss T J = 25 C V AC = 25 mv f = 2 khz -5 2 4 6 8 1 12 Gate Charge, Q G (nc).1 5 1 15 2 Drain-Source Voltage, V DS (V) Figure 15. Gate Charge Characteristics Figure 16. Capacitances vs. Drain-Source Voltage ( - 2 V) 1 1 C iss T J = 25 C V AC = 25 mv f = 2 khz 1.6 1.4 1.2 Capacitance (nf) 1.1 C oss C rss Stored Energy, E OSS (mj) 1.8.6.4.2.1 2 4 6 8 1 Drain-Source Voltage, V DS (V) 2 4 6 8 1 12 Drain to Source Voltage, V DS (V) Figure 17. Capacitances vs. Drain-Source Voltage ( - 1 kv) Figure 18. Output Capacitor Stored Energy 5 CAS3M17BM2,Rev. -
Typical Performance 25 2 T J = 25 C V DD = 9 V R G(ext) = 2.5 Ω V GS = -5/+2 V L = 77 μh E Total 4 35 3 T J = 25 C V DD = 12 V R G(ext) = 2.5 Ω V GS = -5/+2 V L = 77 μh E Total Switching Loss (mj) 15 1 5 E On E Off Switching Loss (mj) 25 2 15 1 E On E Off 5 5 1 15 2 25 3 35 Drain to Source Current, I DS (A) 5 1 15 2 25 3 35 Drain to Source Current, I DS (A) Figure 19. Inductive Switching Energy vs. Drain Current For V DS = 9V, R G = 2.5 Ω Figure 2. Inductive Switching Energy vs. Drain Current For V DS = 12 V, R G = 2.5 Ω Switching Loss (mj) 18 16 14 12 1 8 6 4 2 T J = 25 C V DD = 9 V I DS =3 A V GS = -5/+2 V L = 77 μh E Total 5 1 15 2 25 3 35 4 45 External Gate Resistor RG(ext) (Ohms) E On E Off Switching Loss (mj) 25 2 15 1 5 V DD = 9 V R G(ext) = 2.5 Ω I DS =3 A V GS = -5/+2 V L = 77 μh E Total E On E Off 25 5 75 1 125 15 175 Junction Temperature, T J ( C) Figure 21. Inductive Switching Energy vs. R G(ext) Figure 22. Inductive Switching Energy vs. Temperature 14 12 1 T J = 25 C V DD = 9 V I DS = 3 A V GS = -5/+2 V Time (ns) 8 6 t d (off) 4 t d (on) 2 t r t f 5 1 15 2 25 3 35 4 External Gate Resistor, R G(ext) (Ohms) Figure 23. Timing vs. R G(ext) Figure 24. Resistive Switching Time Description 6 CAS3M17BM2,Rev. -
Typical Performance Maximum Dissipated Power, P tot (W) 2 18 16 14 12 1 8 6 4 2 T J 15 C Drain-Source Continous Current, I DS (DC) (A) 35 3 25 2 15 1 5 T J 15 C Figure 25. Maximum Power Dissipation (MOSFET) Derating vs. Case Temperature 1E-3-4 -2 2 4 6 8 1 12 14 Case Temperature, T C ( C) -4-2 2 4 6 8 1 12 14 Case Temperature, T C ( C) Figure 26. Continous Drain Current Derating vs Case Temperature 1E-3 Junction To Case Impedance, Z thjc ( o C/W) 1E-3 1E-3 1E-6.5.3.1.5.2.1 SinglePulse Junction To Case Impedance, Z thjc ( o C/W) 1E-3 1E-3 1E-6.5.3.1.5.2.1 SinglePulse 1E-6 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3 1 1 Time, t p (s) Figure 27. MOSFET Junction to Case Thermal Impedance 1E-6 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3 1 1 Time, t p (s) Figure 28. Diode Junction to Case Thermal Impedance 1. 1 µs Limited by R DS On 1 µs 1. 1. 1 ms 1. T C = 25 C D =, Parameter: t p.1.1 1 1 1 1 Drain-Source Voltage, V DS (V) 1 ms Figure 29. Maximum Power Dissipation (MOSFET) Derating vs. Case Temperature 7 CAS3M17BM2,Rev. -
Schematic Package Dimensions (mm) CAS3M17BM2 8 CAS3M17BM2,Rev. -
Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive V DS overshoots. Please Refer to application note: Design Considerations when using Cree SiC Modules Part 1 and Part 2. [CPWR-AN12, CPWR-AN13] Copyright 214 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 USA Tel: +1.919.313.53 Fax: +1.919.313.5451 www.cree.com/power 9 CAS3M17BM2 Rev. -