Thin Films Technology. Lecture 3: Physical Vapor Deposition PVD. Jari Koskinen. Aalto University. Page 1

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1 Thin Films Technology Lecture 3: Physical Vapor Deposition PVD Jari Koskinen Aalto University Page 1

2 Thin film deposition PVD Solid target Line of sight deposition Physical Low substrate temperature PECVD Reactive PVD CVD by sublimation CVD Liquid or gas precursor Global deposition Chemical High substrate temperature

3 Physical Vapour Deposition (PVD) Low energy PVD Thermal Evaporation - Electron beam - Resistive heating Molecular Beam Epitaxy (MBE) High Energy PVD Magnetron Sputtering (MS) - DC or RF - Balanced or Unbalanced Pulsed Laser Deposition (PLD) Cathodic arc - DC or pulsed - Filtered or un-filtered - With or without substrate bias High power impulse magnetron sputtering (HIPIMS)

4 PVD process Solid Target Ejected material Substrate for coating

5 PVD Plasma Plasma Colliding electrons ionise atoms Ions and electrons accelerate in electric field collisions excite atoms de-excitation creates photons visible light 5

6 Glow discharge

7 Glow discharge

8 Glow discharge

9 Glow discharge

10 Glow discharge

11 Glow discharge

12 Glow discharge

13 Glow discharge

14 DC Plasma glow discharge and arc 14

15 RF Plasma glow discharge 15

16 RF Plasma glow discharge self bias 16 M. Ohring

17 Self bias at electrodes 4 Sivu 17

18 Energetic ion surface interactions 18

19 PVD coating process (High) vacuum long mean free path of ions high ion energy cleaning of surface desorption of gas sputtering of surface removal of oils water oxides 19

20 Average mean free path (distance between collission) in nitrogen residual gas <λ> Ultra Good High High Intermediate Rough Total pressure of residual gasses

21 Contents Plasma Ion surface interactions Film growth mechanisms Different PVD methods Commercial PVD coatings Scale up 21

22 Source materials Coating material from solid target or gas 22

Energetic ion and surface interactions collision cascade 10-14 10-13 s thermal spike 10-13 10-12

23 Energetic ion and surface interactions collision cascade s thermal spike s Fast diffusion fast cooling relaxation 23 Jari Koskinen, Kts. Aalto simulaatio University 2016

24 Sputtering yield 24

25 Sputter yield and sublimation energy 25

26 Sputter yield angle dependence and energy distribution 26

27 Sputter yield angle dependence and energy distribution 27

28 Sputter yield angle dependence and energy distribution 28

29 Contents Plasma Ion surface interactions Film growth mechanisms Different PVD methods Commercial PVD coatings Scale up 29

neutrals grow the film https://www.yout ube.com/watch?

30 PVD (Physical Vapour Deposition) Material from solid or gas Plasma Energetic ions hit surface Ions and neutrals grow the film ube.com/watch? v=lre5eqx9ofo

31 PVD growth process Ion energy E i ev Surface temperature -190 C C (normally < 200 C) incidence angle Ion density Gas pressure Substrate surface 31 - Chemistry - Impurities - Topography

32 Competition of growing crystals Handbook of Deposition Technologies for Films and Coatings - Science, Applications and Technology (3rd Edition) Edited by: Martin, Peter M William Andrew Publishing Sivu 32

33 Coating structure and plasma parameters slow hot fast cold 2/28/

34 Modified Thorton diagram Sivu 34 A. Anders, Thin Solid Films 518 (2010)

35 Subplantation Sivu 35

36 Subplantation Sivu 36 Schematic diagram of densification by subplantation. A fraction of the incident ions penetrate the film and densify it, the remainder end up on the surface to give thickness growth.

37 Subplantation and experiments -Carbon Sivu 37

38 Subplantation Sivu 38

39 evolution of roughness Fig. 2. Schematic of roughness variation with film thickness in a general case. At first, the films consist of a series of islands where the new phase has nucleated, and the roughness increases quickly. Then the roughness peaks and decreases as the islands coalesce to form a closed, continuous film. The third stage consists of a constant roughness for epitaxial films. Finally, the roughness increases gradually above a roughening transition. The smoothness of tetrahedral amorphous carbon Diamond and Related Materials, Volume 14, Issues 3-7, March-July 2005, Pages C. Casiraghi, A.C. Ferrari, J. Robertson

40 Stress Control Gas pressure /temperature Tensile stress due to collapsing of voids Higher temperature annealing of structure low stress Compressive stress subplantation 2/28/

41 Compressive stress f FD = conc. of Frenkel defects f Ar = conc. of argon ΔΩ FD = volume change due to Frenkel defects ΔΩ Ar = volume change due to argon entrapped 2/28/

42 Tensile stress 2/28/

43 Ion beam nano roughening Enhanced adhesion 43

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Thin Films Technology. Lecture 3: Physical Vapor Deposition PVD. Jari Koskinen. Aalto University. Page 1

Thin Films Technology. Lecture 3: Physical Vapor Deposition PVD. Jari Koskinen. Aalto University. Page 1 Thin Films Technology Lecture 3: Physical Vapor Deposition PVD Jari Koskinen Aalto University Page 1 Contents Plasma Ion surface interactions Film growth mechanisms Different PVD methods Commercial PVD