Kondensaattoriesitys - RISS Ostrobotnia 17092014 Kimmo Saarinen

Kondensaattoriesitys - RISS Ostrobotnia 17092014 Kimmo Saarinen

RISS esitelmä

Esityksen sisältö Mikä on kondensaattori Evoxin historiaa Merkittävimmät kondensaattoriteknologiat Kondensaattorimarkkinat

Mikä on kondensaattori?

What is a Capacitor A CAPACITOR is a passive electronic component consisting of a pair of conductors separated by a dielectric. When a voltage potential difference exists between the conductors, an electric field is present in the dielectric. This field stores energy and produces a mechanical force between the plates. 5

Common Structure All capacitors utilize the same basic mechanism in their structure Electrode Plates Dielectric The value of a capacitor is measured in farads. For 1 farad of capacitance, 1 coulomb of charge is stored on the plates, when 1 volt of force is applied. 1 farad = 1 coulomb / 1 volt 1 coulomb represents ~ 6 x 10 19 electrons 6

CAPACITOR An electronics component that - stores electrical charges - conducts alternating current - separates different voltage levels, i.e. does not conduct direct current C = K A/d x 8.85x 10-12 F Where C = Capacitance expressed in Farads 7 K = Dielectric constant A = Area of the Electrodes in square meters d = Distance between the electrode in meters 8.85x10-12 = Absolute permittivity of vacuum

Capacitor Classification Electrostatic capacitors have a symmetrical structure. Two electrodes are of similar material separated by one dielectric Non-Polarized Electrolytic capacitors have a non-symmetrical structure. Metal anode on which the oxide of that metal is formed to act as dielectric layer. Electrolyte is used as the de facto cathode of the capacitor Polarized 8

The RLC Circuit Theoretical capacitor symbol REAL CAPACITOR equivalent circuit LS ESR IR Z Real capacitor Theoretical capacitor C frequency Z = Impedance LS = Total series L due to the armature (film) or electrodes (MLCC) and the leads of the capacitor ESR = Total series resistance due to armature (film) or electrodes (MLCC), to the leads and to the connection IR = Insulation resistance C = Capacitance LS = LL + LW LL = Inductance of the leads ; LW = Inductance of winding (film) or electrodes (MLCC) ESR = RL + RC + RW RL = Res. of leads ; RC = Res. of contacts ; RW = Res. of winding or electrodes 9 IR Infinite LS zero ESR zero THEORETICAL QUALITY OF CAPACITORS C ESR ESL

Vectors R, X L, X C, Z ESL - Inductive Reactance (X L ) opposes Capacitive Reactance X L ESR 0 X C X Impedance is a factor of vector summation. Z X Z 2 2 X X R C L 1 X C 2 f ( Hertz) C( Farads) X L 2 fl( Henries ) 10

Impedance (Ohms) RLC Frequency Response 1,E+05 Impedance vs. Freq. 47 µf Capacitance with 2.5 nh ESL 1,E+04 1,E+03 1,E+02 1,E+01 0.25 Ohms ESR 1,E+00 0.10 Ohms ESR 0.05 Ohms ESR 1,E-01 0.01 Ohms ESR 1,E-02 0.001 Ohms ESR 1,E-03 1,E-01 1,E+00 1,E+01 1,E+02 1,E+03 1,E+04 1,E+05 1,E+06 1,E+07 1,E+08 Frequency (khz) 1 f 2 LC self-resonant frequency. 11

Impedance Across Types 1000 Lowest impedance is not always highest capacitance 100 10 1 0,1 100 µf Aluminum 10 µf Tantalum 1 µf Ceramic 0,01 1,E+02 1,E+03 1,E+04 1,E+05 1,E+06 1,E+07 12

Loss Factor vs. Application High Frequency or Tuned Circuit Applications Q Power Applications ESR General Applications DF 13

Common Terms Define Loss Element Based on Vector relationship DF = cot(θ) PF = cos(θ) Q = tan(θ) Where: = ESR/X C = tan(δ) = ESR/Z = X C /ESR = 1/DF DF = Dissipation Factor PF = Power Factor Q = Q or Figure of Merit ESR Theta (θ) Z X C Dell (δ) 14

% Capacitance Change Capacitance Change with Frequency Film -2% to -5% Ceramic 0% to -5% Aluminum -15% to -90% ~10kHz to 30kHz Tantalum -15% to -60% ~30kHz to 300kHz FREQUENCY 15

Suomalainen Evox

Lyhyt historia Runar Öhman perustaa Oy Evox Ab:n 1947 Virkkalassa Aluksi mikrofoonien ja gramofonien äänirasioiden valmistusta ja pian myös kondensaattoreiden Paperi-, keraamiset putki- ja muovikondensaattorit (polystyreeni ja polyesteri, film-foil tyyppiä), myöhemmin myös vaihesiirto ja puhelinpakkakondensaattorit 1951 aloitettiin vienti Ruotsiin, Norjaan, Tanskaan, Brasiliaan ja Turkkiin 1956 uusi tehdas 4,5 Mkpl valmistusta Keskityttiin muovikalvokondensaattoreihin ja tuotantokoneisiin 1960-luvun alussa sopimus Nokian kondensaattoritehtaan kanssa, että Nokia tekee vahvavirtakondensaattorit ja Evox heikkovirtakondensaattorit

Lyhyt historia 1964 maailman ensimmäiset automaattiset polystyreenikondensaattoreiden käämikoneet Perustettiin oma konepaja 1965 lisenssi käämikoneista myytiin Siemensille Mahdollisti metalloitujen polyesterikondensaattoreiden kehittämiseen (1967) koneineen ja hieman myöhemmin oman metalloinnin ja leikkuun aloittamisen 1972 perustettiin tutkimus ja tuotekehityslaboratorio 1976 Runar Öhman eläkkeelle ja saatiin tasavallan presidentin vientipalkinto 1979 aloitti Suomussalmen tehdas 1980 Huhtamäki yhtymä osti Evoxin Hieman myöhemmin fuusioitiin Huhtamäkeen-> Huhtamäki Oy Evox Perustettiin tehdas Meksikoon ja Singaporeen 1982 ja yhtiö USA:an 1984

Lyhyt historia 1986 Finvest Oy osti Evoxin -> Evox Oy 1988 Finvest osti LM Erikssonilta RIFA tuotemerkin ja siihen liittyvän kondensaattoriliiketoiminnan Merkittävimmät lisäykset metalloidut paperi- ja Alelektrolyyttikondensaattorit 1989 Meksikon tehdas lopetettiin 1992 Evoxin Virkkalan tehtaan kondensaattorivalmistus siirrettiin Ruotsiin Suomussalmelle ja Singaporeen ja pääkonttori Kalmariin Toiminta jatkui Evox Rifa nimellä 1992 Singaporen tuotanto Batamin saarelle Indonesiaan 1998 pääkonttori takaisin Suomeen

Lyhyt historia Vuonna 2000 Finvest jakautui neljäksi yhtiöksi, jotka kaikki aloittivat Helsingin pörssissä Yhtiön nimi Evox Rifa Group Oyj 2005 Kalmarin tehdas suljettiin ja tuotanto siirrettiin Suomussalmella ja Batamille 2007 yhtiö myytiin amerikkalaiselle KEMET Electronics Co:lle Pois pörssistä ja toiminta jatkui KEMET Electronics Oy:n nimellä Suomessa tällä hetkellä myyntikonttori Espoossa ja tehdas Suomussalmella

Merkittävimmät kondensaattoriteknologiat ja niiden ominaisuuksia

Capacitor Technologies Capacitors Variable Fixed Trimmer Non-Polar + Polar - Glass Porcelain Polymer Film Paper Ceramic Electrolytic Foil Metallized wound/stacked PME/BME Aluminium Tantalum EDLC SLC MLCC MnO2 Poly Wet MnO2 Poly Wet Class1 Class2 Class1 Class2

Material & Size Relationship to Capacitance L Material K W Dielectric Material (K) Vacuum 1.00000 Air 1.00059 C0G 5-90 MLCC X7R 3000-5000 d Y5V 6000-8000 PET 3.3 24 A L W C = e 0KA d Film Elect. PEN 3.0 PP 2.2 PPS 3.0 Al 2 O 3 8.5 Ta 2 O 5 27.7

Properties of different dielectrics Capacitance range, µf High stability ceramics (NPO = COG) Medium to low stability ceramics (X7R, X5R, Y5V, Z5U) Paper PET polyester film PEN polyester film PPS polyphenylenesulphide film PP polypropylene film Ta electrolytic (MnO2 and Polymer) Al electrolytic (polymer) Al electrolytic (wet electrolyte) Super capacitors (EDLCs) 10-6 10-4 10-2 1 10 2 10 4 10 6 F 10 8

Properties of different dielectrics Insulation resistance, M Super capacitors Al electrolytic (wet electrolyte) Al electrolytic (Polymer ) Ta electrolytic (MnO2 and Polymer Low stability ceramics (Z5U,Y5V) Medium stability ceramics (X7R) High stability ceramics (NPO/COG) Paper PEN polyester film PET polyester film PPS Polyphenylenesulphide Film PP polypropylene film 10-1 1 10 10 2 10 3 10 4 10 5 10 6 M 10 7

Properties of different dielectrics Dissipation factor, tan (1% = 10-2 ) at 1 khz PP polypropylene film PPS polyphenylene sulphide film High stability ceramics (NPO=COG) PEN polyester film PET polyester film Paper Medium stability ceramics (X7R) Low stability ceramics (Z5U,Y5V) Ta electrolytic (MnO2 and Polymer) Al electrolytic (Polymer) Aluminium electrolytic Super capacitors 0.00001 0.0001 0.001 0.01 0.1 1.0 Tanδ

MLCC NME vs BME NME Noble Metal Electrode BME Patch Antenna Base Metal Electrode Sn Ni PdAg or Pd Ag Cu Ni Ceramic

Wet Al Electrolytic Capacitor Winding Anode Foil Paper Tabs Cathode Foil Paper

Construction of Al Electrolytic Capacitor Aluminium Anode Foil Oxide Layer (dielectric) Electrolyte Paper layer Aluminium Cathode Foil Simplified enlarged cross section

Etched anodic Al-foil Purity: 99.99% aluminium Etched micro channels: 1 m, L= 30-40 m Dielectric: Al-oxide Al 2 O 3, thickness 1.1nm/V, R =9 + + + + + + + + + + + + + + + + + + - -- -- - -- - -- - -- - -- - -- - -- - -- - Oxide layer on the walls of the etched micro channels Solid Aluminum core Oxide layer on the walls of the etched micro channels

Dry Ta Electrolytic Capacitor Construction Alloy 42 ( NiFe )/ Ta welding epoxy molding PTFE washer tantalum wire polarity mark porous Ta anode pellet tantalum pentoxide manganese dioxide graphite silver paint silver adhesive tin or gold plated terminal tin or gold plated terminal + - Anode Cathode Cathode can be also of conductive polymer instead of manganese dioxide

Tantalum / Polymer Capacitor Structure MnO 2 or Polymer Ta Ta 2 O 5

Technology Primer: Storage Cousins Ultracapacitors and their energy storage cousins Traditional Capacitor Ultracapacitor Battery Dielectric A A Electrolyte HYBRID C C W d Q V 0 A d 1 CV 2 2 d Energy storage on the electrode surface High surface area materials Organic electrolyte to increase voltage ADVANTAGES: Rearrangement of ions FAST No chemical reactions HIGH CYCLE LIFE POWER DELIVERY DEVICE Electroactive materials Energy storage in the bulk of the electrode materials Chemical reactions Mass transfer between the electrodes ADVANTAGE: Faradaic processes HIGH ENERGY ENERGY STORAGE DEVICE

Technology Primer: Ragone Plot Ultracapacitors and their energy storage cousins

Kondensaattorimarkkinat

Volume (Bpcs) Maailman Kondensaattorimarkkinat, Lukumäärä / Kondensaattoriteknologia 3 000 World Capacitor Market in Volume (Bpcs) and Dielectric 2 500 2 000 1 500 1 000 500-1980 1985 1990 1995 2000 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014e Years Ceramics Aluminium Film Tantalum

Value (BUSD) Maailman Kondensaattorimarkkinat, Arvo / Kondensaattoriteknologia World Capacitor Market in Value (BUSD) and Dielectric 25 20 15 10 5 0 1990 1995 2000 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014e Year Ceramics Aluminium Film Tantalum

Volume (Bpcs) Maailman Kondensaattorimarkkinat, Lukumäärä / Markkina-alue 3 000 World Capacitor Market in Volume and Market Area 2 500 2 000 1 500 1 000 500-1980 1985 1990 1995 2000 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014e Years EMEA Japan Americas ROW

Value (BUSD) Maailman kondensaattorimarkkinat, Arvo / Markkina-alue 25 World Capacitor Market in Value and Market Area 20 15 10 5 0 1990 1995 2000 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014e Year EMEA Japan Americas ROW

Global Electronic Industry Production $Trn 4.5 4.0 GLOBAL ELECTRONICS INDUSTRY PRODUCTION Industrial/ Medical 13% Military 7% 2016 Kc212.239bes-global 3.5 Military 8% 2011 Automotive 10% Computer 32% 3.0 2.5 2.0 1.5 Industrial/ Medical 13% Military 19% 1982 Computer 23% Industrial/ Medical 14% Automotive 10% Consumer 11% $1,560Bn Computer 32% Communications 26% Consumer 9% 2/3 of the industry is based on networked communications Communications 29% $2,052Bn China 37% 1.0 0.5 Automotive 4% Consumer 15% $247Bn Communications 26% 29.7% 14.6% 7.4% 18.7% Asia 19% Japan 6% Europe 15% 29.6% Americas 23% 41 0

Global Consumption of EDLCs by Market Segment Estimated 2011 TAM: $245M Est 2015: $1.16B Est 2020: $7B 56% CAGR!

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