S Tehoelektroniikan komponentit J. Niiranen 1 (13) Tentti , kello , sali S4

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1 S Tehoelektroniikan komponentit J. Niiranen 1 (13) Tentti , kello , sali S4 Papereihin Tentissä sallitut apuvälineet - sukunimi ja etunimet - kynät, kumit jne. - opiskelijanumero - taskulaskin - koulutusohjelma. - lukion kaavakokoelma tms. + Laplace taulut 1. Selvitä lyhyesti (max lausetta + mahdollinen kuva), mitä seuraavilla termeillä tarkoitetaan - ioni-istutus - tyristorin toipumisaika - muutoslämpövastus - ESR - lähivaikutus. 2. Esittele IGBT:n rakenne, toimintaperiaate ja ominaisuudet. 3. Selvitä, miten verkkotaajuiset ja suurtaajuiset muuntajat eroavat toisistaan. Kuvaile sanallisesti suurtaajuusmuuntajan (esim. 5 khz, 1 W, 4 V/15 V) suunnittelun vaiheet ja kussakin vaiheessa huomioon otettavat seikat. 4. Kolmea tyristori/diodi -moduulia SKKH 57/16 E G6 (datalehti oheisena) käytetään allaolevassa kolmivaiheisessa tasasuuntaajasillassa. Mikä on moduulien yhteisen jäähdytyselementin lämpövastuksen R th(s-a) oltava, jotta silta kykenisi syöttämään 12 A tasavirran jäähdytysilman lämpötilan ollessa 65 C? 5. Määrää IPP6R199CP -fetin vaatiman jäähdytyselementin lämpövastus, kun fetin virta on oheisen kuvan mukainen. Jäähdytysilman lämpötila on 45 C ja V GS = 1 V. Fetin yli oleva jännite on päällekytkennän aikana 36 V ja katkaisun aikana 5 V. I D 12A 2µs t 4µs

2 SKKH 57/16 E G6 Absolute Maximum Ratings SEMIPACK 1 Thyristor / Diode Modules SKKH 57/16 E G6 Features Heat transfer through aluminium oxide ceramic isolated metal baseplate UL recognized, file no. E63532 Typical Applications DC motor control (e. g. for machine tools) AC motor soft starters Temperature control (e. g. for ovens, chemical processes) Professional light dimming (studios, theaters) Symbol Conditions Values Unit Chip I T(AV) T c =85 C 61 A sinus 18 T c = 1 C 45 A I TSM i 2 t 1 ms T j =25 C 15 A T j = 13 C 12 A 1 ms T j =25 C 1125 A 2 s T j = 13 C 72 A 2 s V RSM 17 V V RRM 16 V V DRM 16 V (di/dt) cr T j = 13 C 14 A/µs (dv/dt) cr T j = 13 C 1 V/µs T j C Module T stg C V isol 1min 3 V a.c.; 5 Hz; r.m.s. 1s 36 V Characteristics Symbol Conditions min. typ. max. Unit Chip V T T j =25 C, I T = 18 A V V T(TO) T j = 13 C.85 1 V r T T j = 13 C mω I DD ;I RD T j = 13 C, V DD = V DRM ; V RD = V RRM 2 ma t gd T j =25 C, I G =1A, di G /dt = 1 A/µs 1 µs t gr V D =.67 * V DRM 2 µs t q T j = 13 C 17 µs I H T j =25 C ma I L T j =25 C, R G =33Ω 3 6 ma V GT T j =25 C, d.c. 2.5 V I GT T j =25 C, d.c. 1 ma V GD T j = 13 C, d.c..25 V I GD T j = 13 C, d.c. 4 ma R th(j-c) per chip.42 K/W cont. per module.21 K/W R th(j-c) per chip.44 K/W sin. 18 per module.22 K/W R th(j-c) per chip.46 K/W rec. 12 per module.23 K/W Module R th(c-s) chip.22 K/W module.11 K/W M s to heatsink M Nm M t to terminals M Nm a 5 * 9,81 m/s 2 w 75 g SKKH by SEMIKRON Rev

3 SKKH 57/16 E G6 Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 1R: Max. power dissipation per chip vs. ambient temperature Fig. 2L: Max. power dissipation of one module vs. rms current Fig. 2R: Max. power dissipation of one module vs. case temperature Fig. 3L: Max. power dissipation of two modules vs. direct current Fig. 3R: Max. power dissipation of two modules vs. case temperature 2 Rev by SEMIKRON

4 SKKH 57/16 E G6 Fig. 4L: Max. power dissipation of three modules vs. direct current Fig. 4R: Max. power dissipation of three modules vs. case temperature Fig. 5: Recovered charge vs. current decrease Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time by SEMIKRON Rev

5 SKKH 57/16 E G6 Fig. 9: Gate trigger characteristics SKKH SEMIPACK 1 This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 Rev by SEMIKRON

6 IPP6R199CP CoolMOS Power Transistor Features Lowest figure-of-merit R ON xq g Ultra low gate charge Extreme dv/dt rated Product Summary V T j,max 65 V R DS(on),max.199 Ω Q g,typ 32 nc High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating; RoHS compliant PG-TO22 CoolMOS CP is specially designed for: Hard switching topologies, for Server and Telecom Type Package Ordering Code Marking IPP6R199CP PG-TO22 SP R199P Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T C =25 C 16 A T C =1 C Pulsed drain current 2) I D,pulse T C =25 C 1 51 Avalanche energy, single pulse E AS I D =6.6 A, V DD =5 V 436 mj Avalanche energy, repetitive t AR 2),3) E AR I D =6.6 A, V DD =5 V.66 2),3) Avalanche current, repetitive t AR I AR 6.6 A MOSFET dv /dt ruggedness dv /dt V DS =...48 V 5 V/ns Gate source voltage V GS static ±2 V AC (f >1 Hz) ±3 Power dissipation P tot T C =25 C 139 W Operating and storage temperature T j, T stg C Mounting torque M3 and M3.5 screws 6 Ncm Rev. 2.3 page

7 IPP6R199CP Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous diode forward current I S 9.9 A T C =25 C Diode pulse current 2) I S,pulse 51 Reverse diode dv /dt 4) dv /dt 15 V/ns Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc K/W Thermal resistance, junction - ambient R thja leaded Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (.63 in.) from case for 1 s C Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =25 µa V Gate threshold voltage V GS(th) V DS =V GS, I D =.66 ma Zero gate voltage drain current I DSS V DS =6 V, V GS = V, T j =25 C µa V DS =6 V, V GS = V, T j =15 C Gate-source leakage current I GSS V GS =2 V, V DS = V na Drain-source on-state resistance R DS(on) V GS =1 V, I D =9.9 A, T j =25 C V GS =1 V, I D =9.9 A, T j =15 C Ω Gate resistance R G f =1 MHz, open drain Ω Rev. 2.3 page

8 IPP6R199CP Parameter Symbol Conditions Values Unit Dynamic characteristics min. typ. max. Input capacitance C iss V GS = V, V DS =1 V, pf Output capacitance C oss f =1 MHz Effective output capacitance, energy related 5) C o(er) V GS = V, V DS = V Effective output capacitance, time to 48 V related 6) C o(tr) Turn-on delay time t d(on) ns Rise time t r V DD =4 V, V GS =1 V, I D =9.9 A, Turn-off delay time t d(off) R G =3.3 Ω Fall time t f Gate Charge Characteristics Gate to source charge Q gs nc Gate to drain charge Q gd V DD =4 V, I D =9.9 A, Gate charge total Q g V GS = to 1 V Gate plateau voltage V plateau V Reverse Diode Diode forward voltage V SD V GS = V, I F =9.9 A, T j =25 C V Reverse recovery time t rr ns Reverse recovery charge Q rr V R =4 V, I F =I S, di F /dt =1 A/µs µc Peak reverse recovery current I rrm A 1) J-STD2 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV =E AR *f. 4) I SD <=I D, di/dt<=2a/µs, V DClink =4V, V peak <V (BR)DSS, T j <T jmax, identical low side and high side switch. 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Rev. 2.3 page

9 IPP6R199CP 1 Power dissipation 2 Safe operating area P tot =f(t C ) I D =f(v DS ); T C =25 C; D = parameter: t p limited by on-state resistance 1 µs 1 µs µs P tot [W] I D [A] DC 1 ms 1 ms T C [ C] V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics Z thjc =f(t P ) I D =f(v DS ); T j =25 C parameter: D=t p /T parameter: V GS V 6 1 V 8 V.2 7 V Z thjc [K/W] I D [A] V V single pulse 15 5 V 4.5 V t p [s] V DS [V] Rev. 2.3 page

10 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D =f(v DS ); T j =15 C R DS(on) =f(i D ); T j =15 C IPP6R199CP parameter: V GS parameter: V GS V 6.5 V V 1 V 8 V 7 V 6 V 5.5 V V 5.5 V 1 V I D [A] V R DS(on) [Ω].6 7 V V V DS [V] I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on) =f(t j ); I D =9.9 A; V GS =1 V I D =f(v GS ); V DS >2 I D R DS(on)max parameter: T j C R DS(on) [Ω] % typ I D [A] 4 C T j [ C] V GS [V] Rev. 2.3 page

11 IPP6R199CP 9 Typ. gate charge 1 Forward characteristics of reverse diode V GS =f(q gate ); I D =9.9 A pulsed I F =f(v SD ) parameter: V DD 1 parameter: T j C, 98% 8 12 V 15 C, 98% 7 4 V C 25 C 6 V GS [V] 5 I F [A] Q gate [nc] V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E AS =f(t j ); I D =6.6 A; V DD =5 V V BR(DSS) =f(t j ); I D =.25 ma E AS [mj] 3 2 V BR(DSS) [V] T j [ C] T j [ C] Rev. 2.3 page

12 IPP6R199CP 13 Typ. capacitances 14 Typ. Coss stored energy C =f(v DS ); V GS = V; f =1 MHz E oss = f(v DS ) Ciss C [pf] 1 2 Coss E oss [µj] Crss V DS [V] V DS [V] Rev. 2.3 page

13 IPP6R199CP Definition of diode switching characteristics Rev. 2.3 page

14 S Tehoelektroniikan komponentit Tentti Ratkaisut Sivu 1 (3) Tentti RATKAISUT Tehtävät 1-3: Katso kirja Tehtävä 4

15 S Tehoelektroniikan komponentit Tentti Ratkaisut Sivu 2 (3) Tehtävä 5

16 S Tehoelektroniikan komponentit Tentti Ratkaisut Sivu 3 (3) Tehtävä 5 jatkoa